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HSB88YPTR C1 的参数 |
| 反向电压Vr
Reverse Voltage |
10V |
| 平均整流电流Io
AVerage Rectified Current |
15mA |
| 最大正向压降VF
Forward Voltage(Vf) |
580mV/0.58V |
| 最大耗散功率Pd
Power dissipation |
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| Description & Applications |
Silicon Schottky Barrier Diode for High Speed Switching ? Low reverse current, Low capacitance. ? CMPAK-4 Package is suitable for high density surface mounting and high speed assembly. ? Silicon Schottky Barrier Diode for High Speed Switching ? Two independent Schottky barrier diode side-by-side |
| 描述与应用 |
硅肖特基二极管高速开关 ?低反向电流，低电容。 ?硅肖特基二极管，高速开关 ?两个独立的肖特基势垒二极管并排 |
| 技术文档PDF下载 |
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相关型号列表 |
| 型号 |
标记/丝印/代码 |
厂家 |
批号 |
封装 |
数量 |
描述 |
详细资料 |
| HSB88YPTR |
C1 |
HITACHI |
05+06NOPB10400 |
SOT-343/CMPAK-4 |
10600 |
二极管Diodes-肖特基势垒二极管SBDSchottky Barrier Diodes-2个管独立式2 Independent |
查看 |
| HSB88WSTR |
|
HITACHI |
05+ROHS1000 |
mop-8 |
15500 |
二极管Diodes-肖特基势垒二极管SBDSchottky Barrier Diodes-2对串联2 Pair Series Connection |
查看 |
| HSB88WSTR |
|
HITACHI |
05+ |
mop-8 |
0 |
二极管Diodes-肖特基势垒二极管SBDSchottky Barrier Diodes-2对串联2 Pair Common Anode |
查看 |
| HSB88WATR |
C7 |
HITACHI |
05+ |
SOT-323/SC-70 |
2000 |
二极管Diodes-肖特基势垒二极管SBDSchottky Barrier Diodes-双管共阳极1 Pair Common Anode |
查看 |
| HSB88YPTR |
C1 |
RENESAS |
06+NOPB |
SOT-343/CMPAK-4 |
0 |
二极管Diodes-肖特基势垒二极管SBDSchottky Barrier Diodes-2个管独立式2 Independent |
查看 |
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