EMF21 F21 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-15V/?10V~+40V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-12V/50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-500mA/100mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
|
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
|
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
|
| Q2基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
10KΩ/Ohm |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
270~680 |
| 截止频率fT
Transtion Frequency(fT) |
260MHz/250MHz |
| 耗散功率Pc
Power Dissipation |
150mW/0.15W |
| Description & Applications |
Features ?Power management (dual transistors) ?2SA2018 and DTC114E are housed independently in a EMT6 or UMT6 package.. ?Power switching circuit in a single package. ?Mounting cost and area can be cut in half. |
| 描述与应用 |
特点 ?电源管理（双晶体管） ?2SA2018和DTC114E被安置独立在EMT6 UMT6包装.. ?电源开关电路，在单一封装中。 ?安装成本和面积可减少一半 |
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