SI8902EDB 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
12V |
| 最大漏极电流Id
Drain Current |
5A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
38m?@ VGS = 4.5V, ID = 1A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.45V~1.0V |
| 耗散功率Pd
Power Dissipation |
1.7W |
| Description & Applications |
Bi-Directional N-Channel 20-V (D-S) MOSFET FEATURES -TrenchFET Power MOSFET -Ultra-Low rSS(on) -ESD Protected: 4000 V -New MICRO FOOT Chipscale Packaging Reduces Footprint Area, Profile (0.65 mm) and On-Resistance Per Footprint Area APPLICATIONS -Battery Protection Circuit -1-2 Cell Li+/LiP Battery Pack for Portable Devices |
| 描述与应用 |
双向N沟道20-V（D-S）的MOSFET 特点 TrenchFET 功率MOSFET 应用 - 电池保护电路 -1-2节Li +/LiP电池：用于便携式设备 |
| 技术文档PDF下载 |
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