SSM5N15FE DP 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
30V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
200mA/0.2A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
4?@ VGS = 4V, ID = 10mA |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.8~1.5V |
| 耗散功率Pd
Power Dissipation |
150mW/0.15W |
| Description & Applications |
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type High-Speed Switching Applications Analog-Switch Applications ? Input impedance is high; driving current is extremely low. ? Can be directly driven by a CMOS device even at low voltage due to low gate threshold voltage. ? High-speed switching ? Housed in an ultra-small package suitable for high density mounting |
| 描述与应用 |
东芝场效应晶体管的硅N沟道MOS类型 高速开关应用 模拟开关应用 ?输入阻抗高，驱动电流极低。 ?可直接驱动一个CMOS设备，即使在低电压下，由于低 栅极阈值电压。 ?高速开关 ?坐落在一个超小型封装，适用于高密度安装 |
| 技术文档PDF下载 |
在线阅读  |
