IRLMS1902TR 2A2 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
|
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
12V |
| 最大漏极电流Id
Drain Current |
3.2A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
170m?@ VGS =2.7V, ID =1.1A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.7V |
| 耗散功率Pd
Power Dissipation |
1.7W |
| Description & Applications |
Generation V Technology Micro 6 Package Style Ultra Low Rds(on) P-Channel MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with Rds(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. |
| 描述与应用 |
第五代技术 微6封装形式 超低的Rds（on） P沟道MOSFET 描述 第五代HEXFETs国际整流器采用先进的加工技术，以实现极低的导通电阻每硅片面积。这样做的好处，加上开关速度快和坚固耐用的设备设计的HEXFET功率MOSFET是众所周知的，为设计师提供了一个非常有效和可靠的设备在多种应用中使用。 其定制的引线框架Micro6包装产生的HEXFET功率MOSFET的Rds（on），比同样大小的SOT-23少60％。这个包是理想的应用印刷电路板空间是一个溢价。它独特的散热设计和RDS（上）减少使与SOT-23相比电流处理能力增加了近300％。 |
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