TSDF1220W-GS08 WF2 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
9V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
6V |
| 集电极连续输出电流IC
Collector Current(IC) |
40mA |
| 截止频率fT
Transtion Frequency(fT) |
12GHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
100 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
100mV/0.1V |
| 耗散功率Pc
Power Dissipation |
200mW/0.2W |
| Description & Applications |
Silicon NPN Planar RF Transistor Applications For low noise applications such as preamplifiers, mixers and oscillators in analog and digital TV–systems (e.g., satellite tuners) up to microwave frequencies. Features Low power applications Very low noise figure High transition frequency fT = 12 GHz |
| 描述与应用 |
硅NPN平面RF晶体管 应用 对于低噪声应用，如模拟和数字电视系统（例如卫星调谐器的前置放大器，混频器和振荡器）微波频率。 特点 低功耗应用 非常低的噪声系数 高转换频率的fT=12 GHz |
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