HN4A51J 34 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-120V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-120V |
| 集电极连续输出电流IC
Collector Current(IC) |
-100mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
100MHz |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
200~700 |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
-300mV |
| Q2基极输入电阻R1
Input Resistance(R1) |
300mW |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
Features ? TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) ? High voltage : VCEO = ?120V ? High hFE : hFE = 200~700 ? Excellent hFE linearity : hFE (IC = ?0.1mA) / hFE (IC = ?2mA) = 0.95 (typ.) ? Audio Frequency General Purpose Amplifier Applications |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
特点 ?东芝晶体管的硅PNP外延型（PCT工艺） ?高电压：VCEO=120V ?高HFE：HFE=200?700 ?优秀的HFE线性：HFE（IC=-0.1毫安的）/ HFE（IC=-2毫安，）= 0.95（典型值） ?音频通用放大器应用 |
| 直流电流增益hFE
DC Current Gain(hFE) |
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| 截止频率fT
Transtion Frequency(fT) |
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| 耗散功率Pc
Power Dissipation |
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| Description & Applications |
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| 描述与应用 |
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| 技术文档PDF下载 |
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