2N7002DW-7 K72 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
60V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
115mA/0.115A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
3.2?@ VGS = 5.0V, ID = 0.05A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
1~2V |
| 耗散功率Pd
Power Dissipation |
200mW/0.2W |
| Description & Applications |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small-Signal-Transistor Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package |
| 描述与应用 |
双N沟道增强型场效应晶体管 小信号晶体管 特点 双N沟道MOSFET 低导通电阻 低栅极阈值电压 低输入电容 开关速度快吗 低输入/输出漏 超小型表面贴装封装 |
| 技术文档PDF下载 |
在线阅读  |
