DDC114YU-7-F N14T3 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
0.21 |
| Q2基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
0.21 |
| 直流电流增益hFE
DC Current Gain(hFE) |
100~600 |
| 截止频率fT
Transtion Frequency(fT) |
250MHz |
| 耗散功率Pc
Power Dissipation |
200mW/0.2W |
| Description & Applications |
Features ?NPN PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR ?Epitaxial Planar Die Construction ?Complementary PNP Types Available (DDA) ?Built-In Biasing Resistors ?Lead Free/RoHS Compliant (Note 3) |
| 描述与应用 |
特点 ?预偏置NPN小信号SOT-363双表面装载晶体管 ?外延平面电路小片建设 ?互补PNP类型（DDA） ?内置偏置电阻 ?无铅/ RoHS规定（注3） |
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