SSM6N25TU NH 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
12V |
| 最大漏极电流Id
Drain Current |
500mA/0.5A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
145m?@ VGS = 4.0V, ID = 250mA |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.5~1.1V |
| 耗散功率Pd
Power Dissipation |
500mW/0.5W |
| Description & Applications |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) High Speed Switching Applications ? Optimum for high-density mounting in small packages ? Low on-resistance: Ron = 395mΩ (max) (@VGS = 1.8 V) Ron = 190mΩ (max) (@VGS = 2.5 V) Ron = 145mΩ (max) (@VGS = 4.0 V) |
| 描述与应用 |
东芝场效应晶体管硅N沟道MOS类型（U-MOSIII） 高速开关应用 ?最适用于高密度安装在小包装 ?低导通电阻RON =395mΩ（最大）（@ VGS=1.8 V） RON=190mΩ（最大）（@ VGS= 2.5 V） RON =145mΩ（最大）（@ VGS=4.0 V） |
| 技术文档PDF下载 |
在线阅读  |
