SI7123DN-T1-GE3 7123 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
8V |
| 最大漏极电流Id
Drain Current |
-16A |
| 源漏极导通电阻Rds
Drain-Source On-State
Resistance |
0.0086Ω @-5.2A,-4.5V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.4V-1.0V |
| 耗散功率Pd
Power Dissipation |
3.8W |
| Description & Applications |
FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET Power MOSFET: 1.5 V Rated ? Ultra-Low On-Resistance ? 100 % Rg Tested ? Compliant to RoHS Directive 2002/95/EC |
| 描述与应用 |
?根据IEC 61249-2-21的无卤素 定义 ?的TrenchFET 功率MOSFET：1.5 V额定 ?超低导通电阻 ?100％的Rg 测试 ?符合RoHS指令2002/95/EC |
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