RN1105CT L4 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
20V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
20V |
| 集电极连续输出电流IC
Collector Current(IC) |
50mA |
| 基极输入电阻R1
Input Resistance(R1) |
2.2kΩ |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47kΩ |
| 电阻比(R1/R2)
Resistance Ratio |
0.0468 |
| 直流电流增益hFE
DC Current Gain(hFE) |
120 |
| 截止频率fT
Transtion Frequency(fT) |
|
| 耗散功率Pc
Power Dissipation |
50 |
| Description & Applications |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor).
* Switching Applications .
* Inverter Circuit Applications.
* Interface Circuit Applications .
* Driver Circuit Applications .
* Incorporating a bias resistor into a transistor reduces parts count.
* Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. |
| 描述与应用 |
东芝晶体管NPN硅外延式（PCT程序）（偏置电阻内置晶体管）。
*开关应用。
*逆变器电路应用。
*接口电路应用。
*驱动器电路应用。
*将偏置电阻晶体管，减少了部件数量。
*减少零件计数使能越来越紧凑的设备制造和装配成本节省。 |
| 技术文档PDF下载 |
在线阅读  |
