2SJ461 H19 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-50V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
7V |
| 最大漏极电流Id
Drain Current |
-0.1A |
| 源漏极导通电阻Rds
Drain-Source On-State
Resistance |
0.31Ω @-10mA,4V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.7--1.3V |
| 耗散功率Pd
Power Dissipation |
200mW/0.2W |
| Description & Applications |
MOS FEILD EFFECT TRANSISTOR P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING can be driven by a 2.5V power source not necessary to consider driving current because of its high input impedance possible to reduce the number of parts by omitting the bias resistor |
| 描述与应用 |
MOS场场效应晶体管 P沟道MOS场效应晶体管用于高速开关 可以由一个2.5V电源 不必考虑驱动电流，因为它的高输入阻抗 能够减少部件的数目通过省去偏置电阻 |
| 技术文档PDF下载 |
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