2SK2170 JA 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
30v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-30v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
1.2~4.5ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-0.2~2.5v |
| 耗散功率Pd
Power Dissipation |
100mW/0.1W |
| Description & Applications |
?N-Channel Junction Silicon FET Applications · Low-frequency amplifier, analog switch, constant current source. Features · Ultrasmall-sized package permitting 2SK2170- applied sets to be made small and slim. |
| 描述与应用 |
?N沟道结硅FET 应用 ?·低频放大器，模拟开关，恒 电流源。 特点 ?·超小尺寸封装，允许2SK2170 应用设置作出小巧玲珑。 |
| 技术文档PDF下载 |
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