BFG196 BFG196 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
20V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
12V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA/0.1A |
| 截止频率fT
Transtion Frequency(fT) |
5GHz~7.5GHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
50~200 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
800mW/0.8W |
| Description & Applications |
NPN Silicon RF Transistor ? For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA ? Power amplifier for DECT and PCN systems ? fT = 7.5GHz F = 1.5 dB at 900MHz |
| 描述与应用 |
NPN硅RF晶体管 ?低噪声，低失真宽带 ??天线放大器和电信 ??集电极电流高达1.5GHz系统 ??20mA到80毫安的 ?功率放大器DECT和PCN系统 ?FT =的7.5GHz ?F =1.5分贝在900MHz |
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