CPH5801 QA 的参数 |
| MOSFET 类型
Type |
N沟道 N-Channel |
| 最大源漏极电压Vds
Drain-Source Voltage |
20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
10V |
| 最大漏极电流Id
Drain Current |
1.4A |
| 源漏极导通电阻Rds(on)
Drain-Source On-State Resistance |
260m?@ VGS = 4V, ID = 700mA |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.4~1.3V |
| DIODE 类型
Type |
肖特基二极管SBD Schottky Barrier Diodes |
| 反向电压Vr
Reverse Voltage |
30V |
| 平均整流电流Io
Average Rectified Current |
1A |
| 最大正向压降VF
Forward Voltage(Vf) |
0.35V@IF=500mA |
| 耗散功率Pd
Power Dissipation |
900mW/0.9W |
| Description & Applications |
DC/DC Converter Applications Features · The CPH5801 composite device consists of following two devices to facilitate high-density mounting.One is an N-channel MOSFET that features low ON resistance, high-speed switching, and low driving voltage. The other is a shottky barrier diode that features short reverse recovery time and low forward voltage. |
| 描述与应用 |
DC/ DC转换器应用 特点 ?·CPH5801复合装置由以下两个设备，以方便高密度mounting.One的是一个N沟道MOSFET，具有低导通电阻，高速切换，驱动电压低。另一种是反向恢复时间短和低正向电压的肖特基势垒二极管，具有。 |
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