CPH5809 QK 的参数 |
| MOSFET 类型
Type |
N沟道 N-Channel |
| 最大源漏极电压Vds
Drain-Source Voltage |
30V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
10V |
| 最大漏极电流Id
Drain Current |
3A |
| 源漏极导通电阻Rds(on)
Drain-Source On-State Resistance |
90m?@ VGS =4V, ID =1.5A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.4~1.3V |
| DIODE 类型
Type |
肖特基二极管SBD Schottky Barrier Diodes |
| 反向电压Vr
Reverse Voltage |
30V |
| 平均整流电流Io
Average Rectified Current |
1A |
| 最大正向压降VF
Forward Voltage(Vf) |
0.35V@IF=500mA |
| 耗散功率Pd
Power Dissipation |
900mW/0.9W |
| Description & Applications |
DC/DC Converter Applications Features ? The CPH5809 composite device consists of following two devices to facilitate high-density mounting.One is an N-channel MOSFET that features low ONresistance, ultrahigh-speed switching, and low driving voltage. The other is a schottky barrier diode that features short reverse recovery time and low forward voltage. ? Each device incorporated in the CPH5809 is equivalent to the MCH3411 and to the SBS005, |
| 描述与应用 |
DC/ DC转换器应用 特点 ?CPH5809复合装置由两个设备，以方便高密度mounting.One的是一个N沟道MOSFET，具有低导通电阻，超高速交换，驱动电压低。另一种是，具有反向恢复时间短和低正向电压的肖特基二极管。 每个注册的移动设备中的CPH5809相当于MCH3411 SBS005 |
| 技术文档PDF下载 |
在线阅读  |
