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H5N2004DSTL 5N2004 的参数 |
最大源漏极电压Vds
Drain-Source Voltage |
200V |
最大栅源极电压Vgs(±)
Gate-Source Voltage |
30v |
最大漏极电流Id
Drain Current |
8A |
源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.48Ω/Ohm @4A,10V |
开启电压Vgs(th)
Gate-Source Threshold Voltage |
3.0-4.5V |
耗散功率Pd
Power Dissipation |
30W |
Description & Applications |
? Low on-resistance: R DS (on) = 0.38 ? typ. ? Low leakage current: IDSS = 1 μA max (at VDS = 200 V) ? High speed switching: tf = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = 4 A) ? Low gate charge: Qg = 14 nC typ (at VDD = 160 V, VGS = 10 V, ID = 8 ? Avalanche ratings |
描述与应用 |
?低导通电阻R DS(ON)=0.38Ω(典型值)。 ?低漏电流:IDSS= 1μA最大(VDS= 200 V) ?高速开关:TF =10 ns(典型值)(VGS=10 V,VDD= 100 V,ID= 4 A) ?低栅极电荷QG =14 NC(典型值)(VDD= 160 V,VGS=10V,ID= 8 A) ?雪崩额定值 |
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相关型号列表 |
型号 |
标记/丝印/代码 |
厂家 |
批号 |
封装 |
数量 |
描述 |
详细资料 |
H5N5006 |
5N5006 |
RENESAS |
05+ |
TO-252/D-PAK |
650 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
AML1005H5N6ST |
|
FDK |
05+ |
0402-5N6 |
5000 |
电感Inductor/Coil/Choke-小功率电感Low Power Inductor-叠层Multilayer |
查看 |
H5N0201MFDN |
DN |
HITACHI |
05+ |
SOT-523 |
2400 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
H5N2004DSTL |
5N2004 |
HITACHI |
05+ |
TO-252/D-PAK |
350 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
LL1005-FH5N6C |
|
TOKO |
05+ |
0402-5N6 |
1500 |
电感Inductor/Coil/Choke-小功率电感Low Power Inductor-叠层Multilayer |
查看 |
LL1005-FH5N6K |
|
TOKO |
05+ |
0402-5N6 |
54000 |
电感Inductor/Coil/Choke-小功率电感Low Power Inductor-叠层Multilayer |
查看 |
LL1005-FH5N6S |
|
TOKO |
06+ |
0402-5N6 |
0 |
电感Inductor/Coil/Choke-小功率电感Low Power Inductor-叠层Multilayer |
查看 |
LL1608-FH5N6S |
|
TOKO |
05+ |
0603-5N6S |
0 |
电感Inductor/Coil/Choke-小功率电感Low Power Inductor-叠层Multilayer |
查看 |
LL1608-FH5N6S |
|
TOKO |
05+ |
0603-5N6S |
133000 |
电感Inductor/Coil/Choke-小功率电感Low Power Inductor-叠层Multilayer |
查看 |
SGHI1005H5N6JT |
|
泰丰 |
04+ |
0402-5N6 |
9000 |
电感Inductor/Coil/Choke-小功率电感Low Power Inductor-叠层Multilayer |
查看 |
LL1005-FH5N6S |
|
TOKO |
06+ |
0402-5N6 |
50000 |
电感Inductor/Coil/Choke |
查看 |
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