IMH11 H11 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
集电极连续输出电流IC
Collector Current(IC) |
50mA |
Q1基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
10KΩ/Ohm |
Q1电阻比(R1/R2)
Q1 Resistance Ratio |
1 |
Q2基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
10KΩ/Ohm |
Q2电阻比(R1/R2)
Q2 Resistance Ratio |
1 |
直流电流增益hFE
DC Current Gain(hFE) |
|
截止频率fT
Transtion Frequency(fT) |
250MHz |
耗散功率Pc
Power Dissipation |
300mW/0.3W |
Description & Applications |
Features ?General purpose (Dual Digital Transistors for Inverter Drive) ?Two DTC114E chips in a UMT or SMT package. ?Mounting possible with UMT3 or SMT3automatic mounting machines. ?Transistor elements are independent, eliminating interference. ?Mounting cost and area can be cut in half. |
描述与应用 |
特点 ?通用(双数字晶体管逆变器驱动) ?两个DTC114E在城市轨道交通或SMT封装的芯片。 ?安装与UMT3或SMT3automatic的安装机器。 ?晶体管元素是独立的,消除干扰。 ?安装成本和面积可减少一半 |
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