IMH1A H1 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
30mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
22KΩ/Ohm |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
22KΩ/Ohm |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
1 |
| Q2基极输入电阻R1
Input Resistance(R1) |
22KΩ/Ohm |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
22KΩ/Ohm |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
|
| 截止频率fT
Transtion Frequency(fT) |
250MHz |
| 耗散功率Pc
Power Dissipation |
300mW/0.3W |
| Description & Applications |
Features ?NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) ?Built-In Biasing Resistors, R1 = R2= 22kW. ?Two DTC124E chips in one package. ?Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). ?The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing lInner circuit of the input. They also have the advantage of completely eliminating parasitic effects. ?Only the on/off conditions need to be set for operation, making the circuit design easy. ?Lead Free/RoHS Compliant. |
| 描述与应用 |
特点 ?NPN100毫安50V复杂的数字晶体管（内置偏置电阻晶体管） ?内置偏置电阻R1= R2=22KW。 ?两个DTC124E芯片在一个封装中。 ?内置启用偏置电阻器的逆变器电路的配置，而无需连接外部输入电阻（见内部电路）。 ?完全隔离允许负偏置lInner，电路的输入偏置电阻组成的薄膜电阻。他们也有优势，完全消除了寄生效应。 ?只有开/关条件需要设置操作，使电路设计容易。 ?无铅/ RoHS标准。 |
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