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NDT451AN 451A 的参数 |
最大源漏极电压Vds
Drain-Source Voltage |
30V |
最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
最大漏极电流Id
Drain Current |
7.2A |
源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.05Ω/Ohm 6A,4.5V |
开启电压Vgs(th)
Gate-Source Threshold Voltage |
1-3V |
耗散功率Pd
Power Dissipation |
3W |
Description & Applications |
N-Channel Enhancement Mode Field Effect Transistor General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. High density cell design for extremely low RDS(ON) High power and current handling capability in a widely used surface mount package |
描述与应用 |
N沟道增强型场效应晶体管 概述 电源SOT N沟道增强模式电源领域 场效应晶体管都采用飞兆半导体 专有的,高密度,DMOS技术。这很 高密度的过程特别是针对减少 通态电阻和提供优越的开关 性能。这些器件特别适用于低 直流电动机的控制和DC / DC电压应用,如 转换快速开关,低线的功率损耗, 以及抗瞬变是必要的。 高密度电池设计极低的RDS(ON) 一种广泛使用的高功率和电流处理能力 表面贴装封装 |
技术文档PDF下载 |
在线阅读 |
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相关型号列表 |
型号 |
标记/丝印/代码 |
厂家 |
批号 |
封装 |
数量 |
描述 |
详细资料 |
NDT014L |
|
FAIRCHILD |
05+ |
SOT-223/SC-73/TO261-4 |
0 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
NDT3055 |
3055 |
FAIRCHILD |
06+PB |
SOT-223/SC-73/TO261-4 |
0 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
NDT451AN |
451A |
FAIRCHILD |
01+ |
SOT-223/SC-73/TO261-4 |
0 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
NDT451AN |
451A |
FAIRCHILD |
05+ |
SOT-223/SC-73/TO261-4 |
2500 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
NDT452AP |
452A |
FAIRCHILD |
05+ |
SOT-223 |
0 |
场效应管FET-MOSFET-P沟道MOSFET P-Channel |
查看 |
NDT453N |
453 |
FAIRCHILD |
05+ |
SOT-223/SC-73/TO261-4 |
0 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
NDT80N02T4 |
|
ON |
05+ |
TO-252/D-PAK |
0 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
NDT014L |
014L |
FAIRCHILD |
05+ |
SOT-223 |
450 |
场效应管FET |
查看 |
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