QS5U27 U27 的参数 |
| MOSFET 类型
Type |
P沟道 P-Channel |
| 最大源漏极电压Vds
Drain-Source Voltage |
-20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
-12V |
| 最大漏极电流Id
Drain Current |
-1.5A |
| 源漏极导通电阻Rds(on)
Drain-Source On-State Resistance |
200m?@ VGS =-4.5V, ID =-1.5A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.7~-2.0V |
| DIODE 类型
Type |
肖特基二极管SBD Schottky Barrier Diodes |
| 反向电压Vr
Reverse Voltage |
20V |
| 平均整流电流Io
Average Rectified Current |
1A |
| 最大正向压降VF
Forward Voltage(Vf) |
0.45V@IF=1A |
| 耗散功率Pd
Power Dissipation |
1W |
| Description & Applications |
Small switching Features The QS5U27 combines Pch Trench MOSFET with a Schottky barrier diode in a single TSMT5 package. Pch Trench MOSFET have a low on-state resistance with a fast switching. The independently connected Schottky barrier diode have a low forward voltage. Applications Load switch, DC / DC conversion |
| 描述与应用 |
小开关 特点 QS5U27结合在一个单一的TSMT5封装肖特基势垒二极管的P沟道沟道MOSFET。 PCH沟道MOSFET具有低通态电阻，具有高速开关。 独立连接的肖特基势垒二极管具有低正向电压。 应用 负载开关，DC/ DC转换 |
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