TSDF1920W-GS08 YH 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
10V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
3.5V |
| 集电极连续输出电流IC
Collector Current(IC) |
40mA |
| 截止频率fT
Transtion Frequency(fT) |
24GHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
100 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
100mV/0.1V |
| 耗散功率Pc
Power Dissipation |
200mW/0.2W |
| Description & Applications |
Silicon NPN Planar RF Transistor Applications For RF front–ends, low noise, and wideband applications, such as in analogue and digital cellular and cordless phones (DECT, PHD), in TV systems (e.g. satellite tuners), in high frequency oscillators up to 12 GHz, in pagers and radar detectors. Features Very low noise figure Very high power gain High transition frequency fT = 24 GHz Low feedback capacitance Emitter pins are thermal leads |
| 描述与应用 |
硅NPN平面RF晶体管 应用 对于RF前端，低噪声，宽带应用，如模拟和数字蜂窝和无绳电话（DECT，PHD），电视系统（例如卫星调谐器），在高频振荡器到12 GHz，传呼机雷达探测器。 特点 非常低的噪声系数 非常高的功率增益 过渡频率fT=24 GHz的 低反馈电容 发射极引脚热商机 |
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