UPA841TD Q 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
9V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
6V/5.5V |
| 集电极连续输出电流IC
Collector Current(IC) |
30mA/100mA |
| 截止频率fT
Transtion Frequency(fT) |
12000MHz/6500MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
75~150/100~160 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
210mW |
| Description & Applications |
Features ? NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINI MOLD ? Low voltage operation ? 2 different built-in transistors (2SC5435, 2SC5600) Q1: Built-in high-gain transistor fT = 12.0 GHz TYP., ?S21e?2= 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Built-in low phase distortion transistor suited for OSC operation fT = 5.0 GHz TYP., ?S21e?2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz ? 6-pin lead-less mini mold package |
| 描述与应用 |
特点 ?NPN硅RF晶体管（带2个不同的元素）于一个6针引线迷你模具 ?低电压工作 ?2个不同的内置晶体管（2SC5435，2SC5600） Q1：内置高增益晶体管 FT =12.0 GHz的TYP?S21E?2= 8.5 dB典型值。 @ VCE= 3 V，IC=10 mA时，F =2吉赫 Q2：内置低相位失真晶体管适合OSC操作 FT =5.0 GHz的TYP。?S21E?2= 4.0 dB（典型值）。 @ VCE= 1 V，IC= 5毫安，F =2吉赫 ?6针引线小型模具包 |
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