RN1106MFV XF 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA/0.1A |
| 基极输入电阻R1
Input Resistance(R1) |
4.7KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| 电阻比(R1/R2)
Resistance Ratio |
0.1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
80 |
| 截止频率fT
Transtion Frequency(fT) |
|
| 耗散功率Pc
Power Dissipation |
0.15W/150mW |
| Description & Applications |
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost. A wide range of resistor values is available for use in various circuits. Complementary to the RN2101MFV~RN2106MFV Lead (Pb) - free |
| 描述与应用 |
开关，逆变电路 接口电路和驱动电路的应用超小型封装 适合高密度安装将一个偏置电阻的晶体管，减少了零件数量，使制造更紧凑的设备降低装配成本 电阻值的范围很广，可用于各种电路 对rn2101mfv ~ rn2106mfv互补 |
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