RN1106CT L5 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
20V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
20V |
| 集电极连续输出电流IC
Collector Current(IC) |
50mA |
| 基极输入电阻R1
Input Resistance(R1) |
4.7KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| 电阻比(R1/R2)
Resistance Ratio |
0.1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
120 |
| 截止频率fT
Transtion Frequency(fT) |
|
| 耗散功率Pc
Power Dissipation |
0.05W/50mW |
| Description & Applications |
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications ?Incorporating a bias resistor into a transistor reduces the number of parts, which enables the manufacture of ever more compact equipment and saves assembly cost. ? Complementary to RN2101ACT to RN2106ACT |
| 描述与应用 |
开关应用逆变电路中的应用接口电路中的应用驱动电路的应用 ?将偏置电阻到一个晶体管减少零件数量，使制造更紧凑的设备节约装配成本 ?互补的rn2101act到rn2106act |
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