TPCF8104 F3D 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-30V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
-6A |
| 源漏极导通电阻Rds
Drain-Source On-State
Resistance |
28m?@ VGS = -10V, ID = -3A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.8~-2.0V |
| 耗散功率Pd
Power Dissipation |
2.5W |
| Description & Applications |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) Notebook PC Applications Portable Equipment Applications ? Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) ? High forward transfer admittance: |Yfs| = 9.6 S (typ.) ? Low leakage current: IDSS = ?10 μA (max) (VDS = ?30 V) ? Enhancement mode: Vth = ?0.8 to ?2.0 V (VDS = ?10 V, ID = ?1mA) |
| 描述与应用 |
东芝场效应晶体管硅P沟道MOS类型（U-MOSⅣ） 笔记本电脑应用 便携式设备的应用 ?低漏源导通电阻RDS（ON）= 21mΩ（典型值） ?高正向转移导纳：| YFS|= 9.6 S（典型值） ?低漏电流：IDSS= -10μA（最大）（VDS=-30 V） ?增强模式：Vth= -0.8到-2.0 V （VDS=-10 V，ID=-1MA） |
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