ME2302 I19RY1 的参数 |
最大源漏极电压Vds
Drain-Source Voltage |
20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage |
8V |
最大漏极电流Id
Drain Current |
2.8A |
源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.085Ω/Ohm 22.5A,4.5V |
开启电压Vgs(th)
Gate-Source Threshold Voltage |
0.6-1.2V |
耗散功率Pd
Power Dissipation |
1.25W |
Description & Applications |
Standard Mini SMD LED DESCRIPTION The new MiniLED series have been designed in a small white SMT package. The feature of the device is the very small package 2.3 mm x 1.3 mm x 1.4 mm. The MiniLED is an obvious solution for small-scale, high-power products that are expected to work reliability in an arduous environment. This is often the case in automotive and industrial application. RDS(ON)≦85m?@VGS=4.5V RDS(ON)≦115m?@VGS=2.5V RDS(ON)≦135m?@VGS=1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability |
描述与应用 |
标准迷你型SMD LED 说明 已经设计了一个白色的小新MiniLED系列 SMT封装。该设备的特点是非常小 包2.3毫米×1.3毫米×1.4毫米。该MiniLED是 小规模,高功率产品,显而易见的解决方案 预计在艰苦环境中工作的可靠性。 这通常是在汽车和工业应用的情况下。 超高密度电池设计极低的RD(ON) 卓越的导通电阻和最大DC电流能力 |
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