BF998R MRS 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
12V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
|
| 最大漏极电流Id
Drain Current |
30MA |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
|
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-2V |
| 耗散功率Pd
Power Dissipation |
200MW |
| Description & Applications |
FEATURES
• Short channel transistor with high forward transfer
admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz. |
| 描述与应用 |
特性
?短通道晶体管高转移
输入电容比导纳
?低噪声增益控制放大器1 GHz
|
| 技术文档PDF下载 |
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