2SJ166 H11 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-50V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
7V |
| 最大漏极电流Id
Drain Current |
-100mA/-0.1A |
| 源漏极导通电阻Rds
Drain-Source On-State
Resistance |
50Ω @-20mA,-4V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-1.0--3.0V |
| 耗散功率Pd
Power Dissipation |
200mW/0.2W |
| Description & Applications |
MOS FIELD EFFECT TRANSISTOR P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING Directly driven by the output of ICs having a 5V power source Not necessary to consider driving current because of its high input impedance Possible to reduce the number of parts by omitting the bias resistor Complementary to 2SK1132 |
| 描述与应用 |
MOS场效应晶体管 P-通道 MOS FET用于高速开关 集成电路的输出端具有5V电源直接驱动 不必考虑驱动电流，因为它的高输入阻抗 能够减少部件的数量通过省去偏置电阻 对管是2SK1132 |
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