NTHS2101PT1g d4 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-8V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
8V |
| 最大漏极电流Id
Drain Current |
-5.4A |
| 源漏极导通电阻Rds
Drain-Source On-State
Resistance |
0.019Ω @-5.4A,-4.5V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.45--1.5V |
| 耗散功率Pd
Power Dissipation |
1.3W |
| Description & Applications |
Features ? Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin Environments such as Portable Electronics ? Designed to Provide Low RDS(on) at Gate Voltage as Low as 1.8 V, the Operating Voltage used in many Logic ICs in Portable Electronics ? Simplifies Circuit Design since Additional Boost Circuits for Gate Voltages are not Required ? Operated at Standard Logic Level Gate Drive, Facilitating Future Migration to Lower Levels using the same Basic Topology ? Pb?Free Package is Available |
| 描述与应用 |
?薄型（<1.1毫米）允许它能够轻松融入极薄 环境，如便携式电子产品 ?专为提供低RDS（ON） 低栅极电压为1.8 V， 用于便携式电子产品在许多逻辑IC的工作电压 ?简化电路设计，因为其他的门电路升压 电压不 ?工作在标准逻辑电平栅极驱动，有利于未来 迁移到下级使用相同的基本拓扑结构 ?无铅包装是可用 |
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