NTHS5445T1 A5 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-8V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
-8V |
| 最大漏极电流Id
Drain Current |
-5.2A/-0.2A |
| 源漏极导通电阻Rds
Drain-Source On-State
Resistance |
62m?@ VGS = -1.8V, ID = -2.0A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.45V |
| 耗散功率Pd
Power Dissipation |
1.3W |
| Description & Applications |
Power MOSFET P-Channel Chip FET Features ? Low RDS(on) ? Higher Efficiency Extending Battery Life ? Logic Level Gate Drive ? Miniature ChipFET Surface Mount Package Applications ? Power Management in Portable and Battery–Powered Products; i.e.,Cellular and Cordless Telephones and PCMCIA Cards |
| 描述与应用 |
功率MOSFET的P-通道芯片FET 特点 ?低的RDS（on） ?更高的效率延长电池寿命 ?逻辑电平栅极驱动器 ?微型ChipFET表面贴装封装 应用 ?电源管理在便携式和电池供电的产品，也就是说，蜂窝电话和无绳电话和PCMCIA卡 |
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