2SK2151 KI 的参数 |
最大源漏极电压Vds
Drain-Source Voltage |
20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage |
15V |
最大漏极电流Id
Drain Current |
1A |
源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.35Ω/Ohm @500mA,10V |
开启电压Vgs(th)
Gate-Source Threshold Voltage |
1-2V |
耗散功率Pd
Power Dissipation |
1.3W |
Description & Applications |
Features N-Channel MOS silicon FET Very high-speed switching applications Low ON resistance Very high-speed switching Low-voltage drive |
描述与应用 |
特性 N沟道硅MOS FET 非常高速开关应用 低导通电阻 非常高的速度开关 低电压驱动 |
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