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2SK2158 G23 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
50V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
7V |
| 最大漏极电流Id
Drain Current |
100mA/0.1A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
16Ω/Ohm @10mA,2.5V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.5-1.1V |
| 耗散功率Pd
Power Dissipation |
200mW/0.2W |
| Description & Applications |
MOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2158 is an N-channel vertical type MOS FET featuring an operating voltage as low as 1.5 V. Because it can be driven on a low voltage and it is not necessary to consider driving current, the 2SK2158 is suitable for use in low-voltage portable systems such as headphone stereo sets and camcorders. Features N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING Capable of drive gate with 1.5 V Because of high input impedance, there is no need to consider driving current Bias resistance can be omitted, enabling reduction in total number of parts |
| 描述与应用 |
MOS场效应晶体管 N沟道MOS FET 高速开关 2SK2158是一个N沟道垂直型MOS场效应管，具有工作电压低至1.5 V。由于它可以 一个低电压驱动，这是没有必要的，以考虑 2SK2158是驱动电流，适合用于在低电压 立体声耳机套和摄像机等便携式系统。 特性 N沟道MOS FET高速开关 能够用1.5 V驱动门 由于输入阻抗高，也没有必要考虑驱动电流 偏压电阻可以省略，能够减少部分总数 |
| 技术文档PDF下载 |
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相关型号列表 |
| 型号 |
标记/丝印/代码 |
厂家 |
批号 |
封装 |
数量 |
描述 |
详细资料 |
| 2SK2151 |
KI |
SANYO |
05+ |
SOT-89/SC-62/PCP |
1300 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
| 2SK2154 |
K2154 |
SANYO |
05+ |
TO-252/TP-FA |
0 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
| 2SK2157 |
NA4 |
NEC |
05+06NOPB900 |
TO-243AA |
2600 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
| 2SK2158 |
G23 |
NEC |
09nopb |
SOT-23/SC-59 |
0 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
| 2SK2158 |
G23 |
NEC |
05+NOPB |
SOT-23/SC-59 |
660 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
| 2SK2159 |
NW |
NEC |
05+1rnopb |
SOT-89/SC-62 |
0 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
| 2SK2159 |
NW |
NEC |
05+ |
SOT-89/SC-62 |
250 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
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