2SK2159 NW 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
60V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
14V |
| 最大漏极电流Id
Drain Current |
2A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.27Ω/Ohm @1A,2.5V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.5-1.1V |
| 耗散功率Pd
Power Dissipation |
2W |
| Description & Applications |
MOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2158 is an N-channel vertical type MOS FET featuring an operating voltage as low as 1.5 V. Because it can be driven on a low voltage and it is not necessary to consider driving current, the 2SK2158 is suitable for use in low-voltage portable systems such as headphone stereo sets and camcorders. Features N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING Capable of drive gate with 1.5 V Small RDS(on) |
| 描述与应用 |
MOS场效应晶体管 N沟道MOS FET 高速开关 2SK2158是一个N沟道垂直型MOS场效应管，具有工作电压低至1.5 V。由于它可以 一个低电压驱动，这是没有必要的，以考虑 2SK2158是驱动电流，适合用于在低电压 立体声耳机套和摄像机等便携式系统。 特性 N沟道MOS FET高速开关 能够用1.5 V驱动门 小的RDS（on） |
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