2SK2157 NA4 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
30V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
5A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.06Ω/Ohm @2.5A,10V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
1.5-2.5V |
| 耗散功率Pd
Power Dissipation |
2W |
| Description & Applications |
MOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2157 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and DC/DC converters. Features N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING New package intermediate between small-signal and power models Can be directly driven by output of 5-V IC Low ON resistance |
| 描述与应用 |
MOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2157 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and DC/DC converters. 特性 N沟道MOS FET高速开关 新包小信号和电源之间的中间 模型 5-V IC输出可直接驱动 低导通电阻 |
| 技术文档PDF下载 |
在线阅读  |
